Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
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چکیده
منابع مشابه
Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting str...
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F. Amet,1 J. R. Williams,2 A. G. F. Garcia,2 M. Yankowitz,2 K. Watanabe,3 T. Taniguchi,3 and D. Goldhaber-Gordon2 1Department of Applied Physics, Stanford University, Stanford, California 94305, USA 2Department of Physics, Stanford University, Stanford, California 94305, USA 3Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan (Received 1...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep10712